Combinatorial research and development by a compact, high performance, and fully PC and controlled system

The main body of the system is a UHV laser MBE apparatus to deposit thin films on a substrate by the laser abration of targets. An excimer or other pulsed laser is irradiated from outside of the UHV chamber via synthesized quartz window. Using two combinatorial masks and a scanning RHEED device,the system enables to prepare many samples at one time, each of them is controlled atomically and has a different growth condition , using a conbinatorial mask and targets irradiated by a laser in a high vaccum. The concept of the combinatorial film deposition is a systematic change of growth condition resulted by dividing a substrate by masking into many small regions having different growth parameters each other. This contributes to outstandingly rapid screening of growth conditions. A load-lock transfer componet that is a standard equipment of our MC-PLD makes exchange of targets and substrates very easy.